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参数资料
| 型号： | IRHNB7264SE |
| 厂商： | International Rectifier |
| 英文描述： | 250Volt, 0.11Ω, (SEE) RAD HARD HEXFET(250V, 0.11Ω,单事件效应抗辐射 HEXFET晶体管) |
| 中文描述： | 250Volt，0.11Ω（见）RAD数据通信硬的HEXFET（250V，0.11Ω，单事件效应抗辐射的HEXFET晶体管） |
| 文件页数： | 7/8页 |
| 文件大小： | 140K |
| 代理商： | IRHNB7264SE |
IRHNB7264SE Device
www.irf.com
7
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 12b.
Gate Charge Test Circuit
Fig 12a.
Basic Gate Charge Waveform
Fig 11c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 11b.
Unclamped Inductive Waveforms
Fig 11a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25
50
75
100
125
150
0
200
400
600
800
1000
Starting T , Junction Temperature( C)
E
ID
14.A
20.A
31A
TOP
BOTTOM
Pre-Irradiation
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNB7360SE | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| IRHNB7460SE | 制造商:International Rectifier 功能描述: |
| IRHNB7Z60 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) |
| IRHNB8064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB8160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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