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参数资料
| 型号： | IRHNB7Z60 |
| 厂商： | International Rectifier |
| 英文描述： | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
| 中文描述： | 30Volt，0.009Ω，美佳RAD数据通信硬的HEXFET（30V的，0.009Ω，美佳抗辐射?沟道的HEXFET晶体管） |
| 文件页数： | 7/8页 |
| 文件大小： | 112K |
| 代理商： | IRHNB7Z60 |
IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
www.irf.com
7
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
25
50
75
100
125
150
0
300
600
900
1200
1500
Starting T , Junction Temperature( C)
E
ID
34A
47A
75A
TOP
BOTTOM
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNB8Z60 | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
| IRHNJ54Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET) |
| IRHNJ53Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET) |
| IRHNJ57Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET) |
| IRHNJ57130 | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNB8064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB8160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB8260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB8Z60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
| IRHNJ3130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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