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参数资料
| 型号： | IRHNB8064 |
| 英文描述： | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
| 中文描述： | 60V的1000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET的- 3封装 |
| 文件页数： | 8/8页 |
| 文件大小： | 116K |
| 代理商： | IRHNB8064 |
8
www.irf.com
IRHNB7260
Pre-Irradiation
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25
°
C, L=0.54mH
Peak IL = 43A, VGS =12V
ISD
≤
43A, di/dt
≤
410A/
μ
s,
VDD
≤
200V, TJ
≤
150
°
C
Foot Notes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 12/01
Case Outline and Dimensions
—
SMD-3
PAD ASSIGNMENTS
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|---|---|
| IRHNB8260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) |
| IRHNB8Z60 | 30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
| IRHNJ3230 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT |
| IRHNJ4230 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT |
| IRHNJ57133SE | TRANSISTOR | MOSFET | N-CHANNEL | 130V V(BR)DSS | 20A I(D) | SMT |
相关代理商/技术参数 |
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| IRHNB8160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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| IRHNB8Z60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
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