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参数资料
| 型号： | IRHNB8260 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|第43A条（丁） |
| 文件页数： | 8/8页 |
| 文件大小： | 116K |
| 代理商： | IRHNB8260 |
8
www.irf.com
IRHNB7260
Pre-Irradiation
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25
°
C, L=0.54mH
Peak IL = 43A, VGS =12V
ISD
≤
43A, di/dt
≤
410A/
μ
s,
VDD
≤
200V, TJ
≤
150
°
C
Foot Notes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 12/01
Case Outline and Dimensions
—
SMD-3
PAD ASSIGNMENTS
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