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参数资料
| 型号： | IRHNJ54Z30 |
| 厂商： | International Rectifier |
| 英文描述： | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET) |
| 中文描述： | 30V的N通道表面安装抗辐射功率MOSFET（30V的，表贴型抗辐射功率?沟道MOSFET的） |
| 文件页数： | 5/8页 |
| 文件大小： | 109K |
| 代理商： | IRHNJ54Z30 |
www.irf.com
5
Pre-Irradiation
IRHNJ57Z30
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
800
1600
2400
3200
4000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
22A
V
= 6V
DS
V
= 15V
DS
V
= 24V
DS
1
10
100
0.4
0.8
1.2
1.6
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
°
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID
Α
)
10 ms
T
c = 25 °C
Single Pulse
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNJ53Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET) |
| IRHNJ57Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET) |
| IRHNJ57130 | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
| IRHNJ57230 | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表贴型抗辐射功率N沟道MOS场效应管) |
| IRHNJ63130 | 100V, N-CHANNEL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNJ57034 | 制造商:International Rectifier 功能描述:N CH MOFET 60V .30OHMS 22AMAX - Rail/Tube |
| IRHNJ57130 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 22A 3SMD-0.5 - Rail/Tube |
| IRHNJ57133SE | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 130V 20A 3SMD-0.5 - Rail/Tube |
| IRHNJ57230 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ57230SE | 制造商:International Rectifier 功能描述:N CH MOSFET 200V .22OHM 12A MAX - Rail/Tube |
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