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参数资料
| 型号： | IRHNJ57230 |
| 厂商： | International Rectifier |
| 英文描述： | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表贴型抗辐射功率N沟道MOS场效应管) |
| 中文描述： | 为200V，N沟道表面安装抗辐射功率MOSFET（200V的电压，表贴型抗辐射功率?沟道马鞍山场效应管） |
| 文件页数： | 8/8页 |
| 文件大小： | 119K |
| 代理商： | IRHNJ57230 |
IRHNJ57230
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 0.67 mH
Peak IL = 13A, VGS = 12V
ISD
≤
13A, di/dt
≤
274A/
μ
s,
VDD
≤
200V, TJ
≤
150°C
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IR JAPAN:
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IR SOUTHEAST ASIA:
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IR TAIWAN:
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Data and specifications subject to change without notice. 10/99
Footnotes:
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
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