- 您现在的位置：买卖IC网 > PDF目录360962 > IRHNJ7230 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT PDF资料下载
参数资料
| 型号： | IRHNJ7230 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 9.4AI（四）|贴片 |
| 文件页数： | 8/8页 |
| 文件大小： | 120K |
| 代理商： | IRHNJ7230 |
IRHNJ7230
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L= 3.4mH,
Peak IL = 9.4A, VGS = 12V
ISD
≤
9.4A, di/dt
≤
660A/
μ
s,
VDD
≤
200V, TJ
≤
150
°
C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Footnotes:
Case Outline and Dimensions
—
SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNJ7330SE | 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package |
| IRHNJ7430SE | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | SMT |
| IRHNJ8230 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT |
| IRHNJ3230 | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表贴型抗辐射功率N沟道MOS场效应管) |
| IRHNJ4230 | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表贴型抗辐射功率N沟道MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNJ7230SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ7230SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ7330SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ7330SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ7430SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
发布紧急采购，3分钟左右您将得到回复。