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参数资料
| 型号： | IRHQ567110 |
| 英文描述： | 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package |
| 中文描述： | 100V的双为2n -和2P -通道MOSFET的采用28引脚LCC封装 |
| 文件页数： | 5/8页 |
| 文件大小： | 128K |
| 代理商： | IRHQ567110 |
www.irf.com
5
Pre-Irradiation
IRHQ597110
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1.0
2.0
3.0
4.0
5.0
6.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 150 C
T = 25 C
°
1
10
100
0
100
200
300
400
500
600
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-2.8A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
-D
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHQ567110N | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ567110P | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ567110SCS | 制造商:International Rectifier 功能描述:RADGARD POWER MOSFET 100 V 2N 2P CHANNEL - Rail/Tube |
| IRHQ567110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ57110 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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