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参数资料
| 型号： | IRHQ6110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC |
| 中文描述： | 晶体管| MOSFET的|阵|互补| 100V的五（巴西）直| 3A条（丁）| LLCC |
| 文件页数： | 1/14页 |
| 文件大小： | 201K |
| 代理商： | IRHQ6110 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
N-Channel
3.0
1.9
12
12
0.1
±20
85
3.0
1.2
3.0
P-Channel
-2.3
-1.5
-9.2
12
0.1
±20
75
~
-2.3
1.2
9.0
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
0.89 (Typical)
g
Pre-Irradiation
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
7/24/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHQ6110 100K Rads (Si)
IRHQ63110 300K Rads (Si)
IRHQ6110 100K Rads (Si)
IRHQ63110 300K Rads (Si)
I
D
CHANNEL
N
N
P
P
0.6
0.6
1.1
1.1
3.0A
3.0A
-2.3A
-2.3A
For footnotes refer to the last page
LCC-28
IRHQ6110
100V, Combination 2N-2P-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
International Rectifier’s RAD-Hard
TM
HEXFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
MOSFET
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
PD - 91781A
相关PDF资料 |
PDF描述 |
|---|---|
| IRHQ63110 | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC |
| IRHQ7214 | 250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| IRHQ8214 | 250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| IRHQ3214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
| IRHQ4214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHQ6110SCS | 制造商:International Rectifier 功能描述:100V 3.000A HEXFET RADHARD - Bulk |
| IRHQ6110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ63110 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ7110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHQ7110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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