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参数资料
| 型号： | IRHQ6110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC |
| 中文描述： | 晶体管| MOSFET的|阵|互补| 100V的五（巴西）直| 3A条（丁）| LLCC |
| 文件页数： | 14/14页 |
| 文件大小： | 201K |
| 代理商： | IRHQ6110 |
IRHQ6110
Pre-Irradiation
14
www.irf.com
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
~
VDD = - 25V, starting TJ = 25
°
C, L= 28.4mH,
Peak IL = - 2.3A, VGS = -12V
ISD
≤
- 2.3A, di/dt
≤
- 244A/
μ
s,
VDD
≤
-100V, TJ
≤
150
°
C
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L= 18.7mH,
Peak IL = 3.0A, VGS = 12V
ISD
≤
3.0A, di/dt
≤
165A/
μ
s,
VDD
≤
100V, TJ
≤
150
°
C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 07/01
Case Outline and Dimensions
—
LCC-28
Q1
Q2
Q3
Q4
Q3
Q4
Q2
Q1
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