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参数资料
| 型号： | IRHQ6110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC |
| 中文描述： | 晶体管| MOSFET的|阵|互补| 100V的五（巴西）直| 3A条（丁）| LLCC |
| 文件页数： | 11/14页 |
| 文件大小： | 201K |
| 代理商： | IRHQ6110 |
www.irf.com
11
Pre-Irradiation
IRHQ6110
P-Channel
Q2,Q3
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
100
200
300
400
500
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
4
8
12
16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-2.3A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
0.5
1.0
-V ,Source-to-Drain Voltage (V)
1.5
2.0
2.5
3.0
3.5
-
S
V = 0 V
T = 25 C
°
T = 150 C
°
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
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|---|---|
| IRHQ6110SCS | 制造商:International Rectifier 功能描述:100V 3.000A HEXFET RADHARD - Bulk |
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