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参数资料
| 型号： | IRHQ57110 |
| 厂商： | International Rectifier |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 3/8页 |
| 文件大小： | 122K |
| 代理商： | IRHQ57110 |
www.irf.com
3
Pre-Irradiation
IRHQ57110
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
(Per Die)
Parameter
Up to 600K Rads(Si)
1
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
—
100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
—
10 — 25 μA V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.226 — 0.246
V
GS
= 12V, I
D
= 2.9A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
— 0.27 — 0.29
V
GS
= 12V, I
D
= 2.9A
On-State Resistance (LCC-28)
V
SD
Diode Forward Voltage
—
1.2 — 1.2 V
Units
Test Conditions
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHQ57110, IRHQ53110, IRHQ54110
2. Part number IRHQ58110
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 4.6A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Cu
28.0
285 43.0 100 100 100 100 70
Br
36.8
305 39.0 100 80 70 50 —
I
59.8
343 32.6 50 40 35 — —
LET
Energy Range
V
DS
(V)
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
V
Cu
Br
I
1000K Rads (Si)
2
相关PDF资料 |
PDF描述 |
|---|---|
| IRHQ58110 | 30V N-Channel PowerTrench MOSFET |
| IRHQ54110 | 30V N-Channel PowerTrench MOSFET |
| IRHQ9110 | 100V, 4 P-Channel Surface Mount Radiation Hardened Power MOSFET(100V,表贴型抗辐射功率四P沟道MOS场效应管) |
| IRHQ93110 | 100V, 4 P-Channel Surface Mount Radiation Hardened Power MOSFET(100V,表贴型抗辐射功率四P沟道MOS场效应管) |
| IRHY3230CM | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHQ57110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ57110SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 4.6A 28PIN LCC - Rail/Tube |
| IRHQ57113SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHQ57214SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHQ57214SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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