参数资料
型号: IRHQ57110
厂商: International Rectifier
元件分类: 功率晶体管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N沟道的PowerTrench MOSFET的
文件页数: 8/8页
文件大小: 122K
代理商: IRHQ57110
IRHQ57110
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 4.4mH,
Peak IL = 4.6A, VGS =12V
ISD
4.6A, di/dt
300A/
μ
s,
VDD
100V, TJ
150°C
Pulse width
300
μ
s; Duty Cycle
2%
Case Outline and Dimensions — LCC-28
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 08/02
Q1
Q2
Q3
Q4
Q3
Q4
Q2
Q1
Pulse width
300
μ
s; Duty Cycle
2%
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