参数资料
型号: IRHQ593110
英文描述: 100V Quad P-Channel MOSFET in a 28-pin LCC package
中文描述: 100V的四P沟道MOSFET的采用28引脚LCC封装
文件页数: 5/8页
文件大小: 128K
代理商: IRHQ593110
www.irf.com
5
Pre-Irradiation
IRHQ597110
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1.0
2.0
3.0
4.0
5.0
6.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 150 C
T = 25 C
°
1
10
100
0
100
200
300
400
500
600
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-2.8A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
-D
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
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