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参数资料
| 型号： | IRHQ9110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| 中文描述： | 晶体管| MOSFET的|阵| P通道| 100V的五（巴西）直| 2.3AI（四）| LLCC |
| 文件页数： | 3/8页 |
| 文件大小： | 132K |
| 代理商： | IRHQ9110 |
www.irf.com
3
Radiation Characteristics
IRHQ9110
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
(Per Die)
Parameter
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 — -100 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
- 2.0 -4.0 - 2.0 -5.0
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— - 25 — -25 μA V
DS
= -80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 1.056 — 1.056
V
GS
= -12V, I
D
= -1.5A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
— 1.1 — 1.1
V
GS
= -12V, I
D
= -1.5A
On-State Resistance (LCC-28)
V
SD
Diode Forward Voltage
— -2.5 — -2.5 V V
GS
= 0V, IS = -2.3A
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHQ9110
2. Part number IRHQ93110
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=5V @V
=10V @V
=15V @V
=20V
Cu
28.0
285 43.0 -100 -100 -100 -70 -60
Br
36.8
305 39.0 -100 -100 -70 - 50 -40
I
59.8
343 32.6 -60 — — — —
LET
Energy Range
V
DS
(V)
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS
V
Cu
Br
I
相关PDF资料 |
PDF描述 |
|---|---|
| IRHQ93110 | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| IRHSLNA53064 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
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| IRHSLNA54064 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHQ9110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ9110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ93110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSLNA53064 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) |
| IRHSLNA53Z60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
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