- 您现在的位置：买卖IC网 > PDF目录360962 > IRHSLNA58064 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT PDF资料下载
参数资料
| 型号： | IRHSLNA58064 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 75A条（丁）|贴片 |
| 文件页数： | 2/9页 |
| 文件大小： | 114K |
| 代理商： | IRHSLNA58064 |
IRHSLNA57064
2
www.irf.com
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
60
—
Typ
—
—
Max Units
— V VGS = 0V, ID = 1.0mA
6.1 m
VGS = 12V, ID = 45A
Test Conditions
BVDSS
RDS(on)
VGS(th)
gfs
IDSS
2.0
45
— — 50
—
—
—
—
4.0
V VDS = VGS, ID = 1.0mA
—
S (
)
VDS > 15V, IDS = 45A
VDS = 48V, VGS=0V
50
mA
VGS = 0V, TJ = 125°C
100
— -100 nA
—
160 VGS =12V, ID =45A,
—
55 nC VDS = 30V
—
65
—
35 VDD = 30V, ID = 45A,
—
125 ns
—
75
—
50
6.6
—
Measured from center of drain
pad to center of source pad
VDS = 48V,
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
VGS = 20V
nH
μ
A
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
VSD
Diode Forward Voltage
Min Typ
—
—
—
—
—
—
Max Units
0.93
0.9
0.82
100
210
—
Test Conditions
—
—
—
—
—
TJ = -55°C, ID=45A, VGS = 0V
TJ = 25°C, ID= 45A, VGS = 0V
TJ = 125°C, ID=45A, VGS = 0V
Tj = 25°C, IF =45A, di/dt
≤
100A/
μ
s
VDS
≤
30V
Measured from center of drain pad to
center of source pad (for Schottky only)
trr
QRR
LS + LD Total Inductance
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
nH
7.95
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
V
Thermal Resistance
Parameter
RthJC
Junction-to-Case (MOSFET)
RthJC
Junction-to-Case (Schottky)
Min Typ Max
—
—
—
—
Units
Test Conditions
0.5
0.7
°C/W
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
相关PDF资料 |
PDF描述 |
|---|---|
| IRHSLNA58Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA53Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA54Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA57Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA58Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHSLNA58Z60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA53064 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSNA53064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSNA53Z60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA54064 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
发布紧急采购，3分钟左右您将得到回复。