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参数资料
| 型号： | IRHSLNA58064 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 75A条（丁）|贴片 |
| 文件页数： | 3/9页 |
| 文件大小： | 114K |
| 代理商： | IRHSLNA58064 |
IRHSLNA57064
www.irf.com
3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHSLNA57064, IRHSLNA53064 and IRHSLNA54064
2. Part number IRHSLNA58064
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Kr
39.2
300 37.4 60 60 60 52 34
Xe
63.3
300 29.2 46 46 35 25 15
Au
86.6
2068 106 35 35 27
LET
Energy Range
V
DS
(V)
20
14
0
10
20
30
40
50
60
70
0
-5
-10
-15
-20
VGS
V
Kr
Xe
Au
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA
R
DS(on)
Static Drain-to-Source
— 6.1 — 7.1
m
V
GS
= 12V, I
D
=45A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 6.1 — 7.1
m
V
GS
= 12V, I
D
=45A
On-State Resistance (SMD-2)
V
SD
Diode Forward Voltage
— 1.3 — 1.3 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=48V, V
GS
=0V
V
GS
= 0V, IS = 45A
⑦
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相关代理商/技术参数 |
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|---|---|
| IRHSLNA58Z60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA53064 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSNA53064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSNA53Z60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA54064 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
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