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参数资料
| 型号： | IRHSNA58Z60 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 75A条（丁）|贴片 |
| 文件页数： | 3/9页 |
| 文件大小： | 113K |
| 代理商： | IRHSNA58Z60 |
IRHSNA57Z60
www.irf.com
3
Radiation Characteristics
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
5
10
15
20
25
30
35
0
-5
-10
-15
-20
VGS
V
Br
I
AU
Table 2. Single Event Effect Safe Operating Area
⑦
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
37.9
255 33.4 30 30 30 25 20
I
59.4
290 28.8 25 25 20 15 10
Au
80.3
313 26.5 22.5 22.5 15
LET
Energy Range
V
DS
(V)
10
—
1. Part numbers IRHSNA57Z60, IRHSNA53Z60 and IRHSNA54Z60
2. Part number IRHSNA58Z60
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 30 — 30 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA V
DS
= 24V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 4.0 — 5.0
m
V
GS
= 12V, I
D
=45A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 3.5 — 4.0
m
V
GS
= 12V, I
D
=45A
On-State Resistance (SMD-2)
V
SD
Diode Forward Voltage
— 1.3 — 1.3 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
GS
= 0V, IS = 45A
⑦
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