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参数资料
| 型号： | IRHSNA58Z60 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 75A条（丁）|贴片 |
| 文件页数： | 9/9页 |
| 文件大小： | 113K |
| 代理商： | IRHSNA58Z60 |
IRHSNA57Z60
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Data and specifications subject to change without notice. 08/02
Case Outline and Dimensions — SMD-2
Repetitive Rating; Pulse width limited by
maximum junction temperature
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
50% Duty Cycle, Rectangular
VDD = 25V, starting TJ = 25°C, L= 0.3 mH
Peak IL = 75A, VGS = 12V
Footnotes:
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Specified Radiation Characteristics are for
Radiation Hardened MOSFET die only.
⑦
Pre-Irradiation
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