- 您现在的位置：买卖IC网 > PDF目录360962 > IRHY7130CM TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA PDF资料下载
参数资料
| 型号： | IRHY7130CM |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 14.4AI（四）|对257AA |
| 文件页数： | 2/8页 |
| 文件大小： | 107K |
| 代理商： | IRHY7130CM |
2
www.irf.com
IRHY7130CM
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
14.4
58
1.8
275
2.5
Test Conditions
—
—
—
—
—
V
nS
μC
T
j
= 25°C, IS = 14.4A, VGS = 0V
Tj = 25°C, IF = 14.4A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
1.67
80
Typical socket mount
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.11
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
2.5
—
—
—
—
—
—
—
—
0.18
0.20
4.0
—
25
250
VGS = 12V, ID =9.1A
VGS = 12V, ID = 14.4A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 9.1A
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =14.4A
VDS = 50V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
10
20
35
75
70
60
—
nC
VDD = 50V, ID =14.4A
VGS =12V, RG = 7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
960
340
85
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
°C/W
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
相关PDF资料 |
PDF描述 |
|---|---|
| IRHY8130CM | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| IRHY53034CM | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| IRHY54034CM | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| IRHY57034CM | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| IRHY57133CMSE | 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHY7230CM | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7330CMSE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7430CMSE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7434CMSE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7G30CMSE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
发布紧急采购，3分钟左右您将得到回复。