- 您现在的位置：买卖IC网 > PDF目录360962 > IRHY7130CM TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA PDF资料下载
参数资料
| 型号： | IRHY7130CM |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 14.4AI（四）|对257AA |
| 文件页数： | 3/8页 |
| 文件大小： | 107K |
| 代理商： | IRHY7130CM |
www.irf.com
3
Radiation Characteristics
IRHY7130CM
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 25 μA V
DS
=80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.18 — 0.24
V
GS
= 12V, I
D
=9.1A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.18 — 0.24
V
GS
= 12V, I
D
=9.1A
On-State Resistance (TO-257AA)
V
SD
Diode Forward Voltage
— 1.8 — 1.8 V V
GS
= 0V, IS = 14.4A
100K Rads(Si)
1
300 - 1000K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHY7130, (JANSR2N7380)
2. Part numbers IRHY3130 , IRHY4130 and IRHY8130 (JANSF2N7380, JANSG2N7380 and JANSH2N7380)
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
V
Cu
Br
n
o
T
E
m
L
)
2
m
c
(
V
e
M
y
)
g
e
n
e
M
(
E
V
e
)
g
n
m
a
R
μ
)
V
(
S
D
V
V
0
=
S
G
V
@
V
5
=
S
G
V
@
V
0
1
=
S
G
V
@
V
5
1
=
S
G
V
@
V
0
2
=
S
G
V
@
u
C
8
2
5
8
2
3
4
0
0
1
0
0
1
0
0
1
0
8
0
6
r
B
8
3
5
0
3
9
3
0
0
1
0
9
0
7
0
5
—
相关PDF资料 |
PDF描述 |
|---|---|
| IRHY8130CM | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| IRHY53034CM | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| IRHY54034CM | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| IRHY57034CM | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| IRHY57133CMSE | 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHY7230CM | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7330CMSE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7430CMSE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7434CMSE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7G30CMSE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
发布紧急采购，3分钟左右您将得到回复。