参数资料
型号: IRKH162-16D25
厂商: VISHAY SEMICONDUCTORS
元件分类: 晶闸管
英文描述: 355 A, 1600 V, SCR
文件页数: 5/13页
文件大小: 251K
代理商: IRKH162-16D25
IRK.135, .136, .141, .142, .161, .162 Series
13
Bulletin I27101 rev. B 04/98
www.irf.com
Fig. 36 - Gate Characteristics
Fig. 34 - Thermal Impedance Z
thJC
Characteristics
Fig. 35 - Gate Characteristics
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
th
J
C
Tr
a
n
si
en
t
Th
er
m
a
lI
m
p
e
d
a
n
c
e
Z
(
K
/W
)
Per Junction
Steady State Value
R
= 0.20 K/W
R
= 0.17 K/W
(DC Operation)
thJC
IRK.136.. Series
IRK.142.. Series
IRK.162.. Series
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
°C
Tj
=
-4
0
°
C
(1)
(2)
(3)
Instantaneous Gate Current (A)
In
st
a
n
ta
ne
o
u
s
G
a
te
V
o
lt
a
g
e
(V
)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
Rectangular gate pulse
(1) PGM = 60W, tp = 0.66ms
(2) PGM = 40W, tp = 1ms
(3) PGM = 20W, tp = 2ms
(4) PGM = 10W, tp = 4ms
IRK.136.. Series
Frequency Limited by PG(AV)
Tj
=
1
3
0
°C
(4)
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
°C
Tj
=
1
2
5
°
C
Tj
=
-4
0
°
C
(1)
(2)
(3)
Instantaneous Gate Current (A)
In
st
a
n
ta
n
e
o
u
s
G
a
te
V
o
lt
ag
e
(
V
)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10 V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
Rectangular gate pulse
(1) PGM = 60W, tp = 0.66ms
(2) PGM = 40W, tp = 1ms
(3) PGM = 20W, tp = 2ms
(4) PGM = 10W, tp = 4ms
IRK.142.. /IRK.162.. Series
Frequency Limited by PG(AV)
(4)
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