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参数资料
| 型号： | IRKH162-16D25 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 355 A, 1600 V, SCR |
| 文件页数： | 7/13页 |
| 文件大小： | 251K |
| 代理商： | IRKH162-16D25 |
IRK.135, .136, .141, .142, .161, .162 Series
3
Bulletin I27101 rev. A 09/97
www.irf.com
I
RRM
Maximum peak reverse and
50
mA
T
J
= 150oC
I
DRM
off-state leakage current
V
INS
RMS isolation voltage
3000
V
50Hz, circuit to base, all terminals shorted,
t = 1s
dv/
dt
critical rate of rise of off-state
1000
V/s
TJ = TJ max., exponential to 67% rated VDRM
voltage
IRK.135.
IRK.141.
IRK.161.
IRK.136.
IRK.142.
IRK.162.
td
Typical delay time
2.0
1.0
s
T
J = 25
oC Gate Current = 1A dIg/
dt
= 1A/s
tr
Typical rise time
3.0
2.0
s
T
J
= 25oC Vd = 0,67% V
DRM
tq
Typical turn-off time
50 - 150
s
I
TM = 300 A; -dI/dt = 15 A/s; TJ = TJ max
Vr = 50 V; dV/dt = 20 V/s; Gate 0 V, 100
IRK.135.
IRK.141.
IRK.161.
IRK.136.
IRK.142.
IRK.162.
Blocking
Thermal and Mechanical Specifications
T
J
Max. junction operating
-40 to 130
-40 to 150
°C
temperature range
T
stg
Max. storage temperature
-40 to 150
°C
range
RthJC Max. thermal resistance,
0.20
0.17
K/W
DC operation, per junction
junction to case
R
thCS
Max. thermal resistance,
0.035
K/W
Mounting surface smooth, flat and greased
case to heatsink
Per module
T
Mounting
IAP to heatsink
4 to 6
Nm
torque ± 10%
busbar to IAP
4 to 6
wt
Approximate weight
500 (17.8)
g (oz)
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
IRK.135.
IRK.141.
IRK.161.
IRK.136.
IRK.142.
IRK.162.
Parameter
Units Conditions
Parameter
Units Conditions
Switching
Triggering
P
GM
Max. peak gate power
5
10
W
tp
≤ 5ms,T
J = TJ max.
P
G(AV) Max. average gate power
1
2
W
f=50Hz, T
J = T J max.
I
GM
Max. peak gate current
2
3
A
tp
≤ 5ms,T
J
= T
J
max.
-V
GT
Max. peak negative
5
V
gate voltage
V
GT
Max. required DC gate
4.0
V
TJ = - 40°C
Anode supply = 12V, resistive
voltage to trigger
3.0
TJ = 25°C
load; Ra = 1
2.0
TJ = TJmax.
I
GT
Max. required DC gate
350
TJ = - 40°C
Anode supply = 12V, resistive
current to trigger
200
mA
TJ = 25°C
load; Ra = 1
100
TJ = TJmax.
V
GD
Max. gate voltage
0.25
0.30
V
@ T
J
= T
J
max., ratedV
DRM
applied
that will not trigger
I
GD
Max. gate current
10
mA
that will not trigger
di/
dt
Max. rate of rise of
300
500
A/s
@T
J
=T
J
max., I
TM
=400Arated V
DRM
applied
turned-on current
Parameter
Units Conditions
IRK.135.
IRK.141.
IRK.161.
IRK.136.
IRK.142.
IRK.162.
Parameter
Units Conditions
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKH162-16D25N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|2.5KV V(RRM)|160A I(T) |
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