参数资料
型号: IRKT142
厂商: International Rectifier
英文描述: THYRISTOR/DIODE and THYRISTOR/THYRISTOR
中文描述: 晶闸管/二极管和晶闸管/晶闸管
文件页数: 3/12页
文件大小: 381K
代理商: IRKT142
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
3
www.irf.com
Thermal and Mechanical Specifications
T
J
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
torque ± 10% busbar to IAP
Approximate weight
Case Style
-40 to 125
°C
T
stg
-40 to 150
°C
R
thJC
0.18
0.18
0.16
K/W
DC operation, per junction
R
thCS
0.05
K/W
Mounting surface smooth, flat and greased
Per module
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
T
IAP to heatsink
4 to 6
4 to 6
200 (7.1)
New Int-A-Pak
Nm
wt
g(oz)
Triggering
P
GM
P
G(AV)
Max. average gate power
Max. peak gate power
12
W
tp
5ms, T
J
= T
J
max.
f=50Hz, T
J
= T
J
max.
tp
5ms, T
J
= T
J
max.
3
W
I
GM
-V
GT
Max. peak gate current
3
A
Max. peak negative
10
V
gate voltage
V
GT
Max. required DC gate
voltage to trigger
4
V
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
Anode supply = 6V, resistive
load; Ra = 1
2.5
1.7
270
150
80
0.3
I
GT
Max. required DC gate
current to trigger
Anode supply = 6V, resistive
load; Ra = 1
mA
V
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Max. rate of rise of
turned-on current
V
I
GD
10
mA
di/
dt
300
A/μs
@ T
J
= T
J
max., I
TM
= 400A
rated V
DRM
applied
Sinusoidal conduction @ T
J
max.
120
o
90
o
Rectangular conduction @ T
J
max.
120
o
90
o
Devices
Units
180
o
60
o
30
o
180
o
60
o
30
o
IRK.136
0.007
0.01
0.013
0.0155
0.017
0.009
0.012
0.014
0.015
0.017
IRK.142
0.0019
0.0019
0.0020
0.0020
0.0021
0.0018
0.0022
0.0023
0.0023
0.0020 K/W
IRK.162
0.0030
0.0031
0.0032
0.0033
0.0034
0.0029
0.0036
0.0039
0.0041
0.0040
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Blocking
I
RRM
I
DRM
Maximum peak reverse and
off-state leakage current
50
mA
T
J
= 125
o
C
V
INS
RMS isolation voltage
3500
V
50Hz, circuit to base, all terminals shorted, t = 1s
dV/dt critical rate of rise of off-state voltage
1000
V/μs
T
J
= T
J
max., exponential to 67% rated V
DRM
相关PDF资料
PDF描述
IRKT162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
IRKL136-16 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
IRKL142-04 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
IRKL142-08 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
IRKT162-12 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
相关代理商/技术参数
参数描述
IRKT142/04 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/DIODE and THYRISTOR/THYRISTOR
IRKT142/08 功能描述:SCR DBL HISCR 800V 140A INTAPAK RoHS:否 类别:半导体模块 >> SCR 系列:- 其它有关文件:SCR Module Selection Guide 标准包装:10 系列:- 结构:串联 - SCR/二极管 SCR 数目,二极管:1 SCR,1 个二极管 电压 - 断路:1600V 电流 - 栅极触发电流 (Igt)(最大):150mA 电流 - 导通状态 (It (AV))(最大):95A 电流 - 导通状态 (It (RMS))(最大):210A 电流 - 非重复电涌,50、60Hz (Itsm):1785A,1870A 电流 - 维持(Ih):250mA 安装类型:底座安装 封装/外壳:ADD-A-PAK(3 + 2) 包装:散装 其它名称:*IRKL92/16AIRKL92/16IRKL92/16-ND
IRKT142/08PBF 功能描述:SCR模块 800 Volt 140 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流(在 VDRM IDRM 下):20 mA 开启状态电压:1.43 V 保持电流(Ih 最大值): 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK
IRKT142/12 功能描述:SCR DBL HISCR 1200V 140A INTAPAK RoHS:否 类别:半导体模块 >> SCR 系列:- 其它有关文件:SCR Module Selection Guide 标准包装:10 系列:- 结构:串联 - SCR/二极管 SCR 数目,二极管:1 SCR,1 个二极管 电压 - 断路:1600V 电流 - 栅极触发电流 (Igt)(最大):150mA 电流 - 导通状态 (It (AV))(最大):95A 电流 - 导通状态 (It (RMS))(最大):210A 电流 - 非重复电涌,50、60Hz (Itsm):1785A,1870A 电流 - 维持(Ih):250mA 安装类型:底座安装 封装/外壳:ADD-A-PAK(3 + 2) 包装:散装 其它名称:*IRKL92/16AIRKL92/16IRKL92/16-ND
IRKT142/12PBF 功能描述:SCR模块 1200 Volt 140 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流(在 VDRM IDRM 下):20 mA 开启状态电压:1.43 V 保持电流(Ih 最大值): 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK