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参数资料
| 型号： | IRL2203NL |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 116A TO-262 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 116A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 60A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3290pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
| 其它名称： | *IRL2203NL |
PD - 94394A
IRL2203NS
IRL2203NL
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Advanced Process Technology
HEXFET ? Power MOSFET
l
l
l
l
l
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Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
100% R G Tested
G
D
S
V DSS = 30V
R DS(on) = 7.0m ?
I D = 116A ?
Description
Advanced HEXFET ? Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D 2 Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
Absolute Maximum Ratings
D 2 Pak
IRL2203NS
TO-262
IRL2203NL
Symbol
I D @ T C = 25°C
Parameter
Continuous Drain Current, V GS @ 10V
Max
116
Units
I D @ T C = 100°C Continuous Drain Current, V GS @ 10V
82
A
I DM
Pulsed Drain Current
400
P D @T A = 25°C
Power Dissipation
3.8
W
P D @T C = 25°C Power Dissipation
Linear Derating Factor
180
1.2
W
W/°C
V GS
I AR
E AR
dv/dt
T J
T STG
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case)
V
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R θ JC
R θ JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount, steady state)
Typ
–––
–––
Max
0.85
40
Units
°C/W
www.irf.com
1
11/12/03
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相关代理商/技术参数 |
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|---|---|
| IRL2203NLPBF | 功能描述:MOSFET MOSFT 30V 116A 7mOhm 40nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL2203NPBF | 功能描述:MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL2203NS | 功能描述:MOSFET N-CH 30V 116A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRL2203NS.IRL2203NL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:(161.16 k) |
| IRL2203NSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 116A 3-Pin(2+Tab) D2PAK |
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