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| 型号： | IRL3803S |
| 厂商： | International Rectifier |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 140A D2PAK |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 140A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 71A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 140nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 5000pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IRL3803S |
IRL3803S/L
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
30
???
??? V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
???
0.052
???
V/°C Reference to 25°C, I D = 1mA ?
0.009
V GS = 4.5V, I D = 59A ?
μA
100 V GS = 16V
-100
V GS = -16V
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
???
???
1.0
55
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
14
230
29
35
0.006 V GS = 10V, I D = 71A ?
?
V V DS = V GS , I D = 250μA
??? S V DS = 25V, I D = 71A ?
25 V DS = 30V, V GS = 0V
250 V DS = 24V, V GS = 0V, T J = 150°C
nA
140 I D = 71A
41 nC V DS = 24V
78 V GS = 4.5V, See Fig. 6 and 13 ??
??? V DD = 15V
??? I D = 71A
??? R G = 1.3 ?
??? R D = 0.20 ?, See Fig. 10 ??
L S
Internal Source Inductance
???
7.5
???
nH
Between lead,
and center of die contact
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
???
???
???
5000 ??? V GS = 0V
1800 ??? pF V DS = 25V
880 ??? ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
??? ??? 140 ?
??? ??? 470
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Diode Forward Voltage
Reverse Recovery Time
??? ??? 1.3 V T J = 25°C, I S = 71A, V GS = 0V ?
??? 120 180 ns T J = 25°C, I F = 71A
Q rr
Reverse Recovery Charge
??? 450 680 nC
di/dt = 100A/μs ??
t on
Notes:
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 15V, starting T J = 25°C, L = 180μH
R G = 25 ? , I AS = 71A. (See Figure 12)
? I SD ≤ 71A, di/dt ≤ 130A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRL3803 data and test conditions.
? Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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| IRL3803STRL | 功能描述:MOSFET N-CH 30V 140A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| IRL3803STRR | 功能描述:MOSFET N-CH 30V 140A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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