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| 型号： | IRL530S |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 15A D2PAK |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 9A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 930pF @ 25V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IRL530S |
IRL530S, SiHL530S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
D 2 PAK
(TO-263)
V GS = 5.0 V
100
28
3.8
14
Single
D
0.16
Definition
? Surface Mount
? Available in Tape and Reel
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Logic Level Gate Drive
? R DS(on) Specified at V GS = 4 V and 5 V
? 175 °C Operating Temperature
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design,
low on-resistance and
G
cost-effectiveness.
The D 2 PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
G D
S
S
N-Channel MOSFET
provides the highest power capability and the lowest
possible on resistance in any existing surface mount
package. The D 2 PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHL530STRR-GE3 a
IRL530STRRPbF a
SiHL530STR-E3 a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
100
± 10
UNIT
V
Continuous Drain Current
Current a
Pulsed Drain
V GS at 5 V
T C = 25 °C
T C = 100 °C
I D
I DM
15
11
60
A
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
0.59
0.025
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
290
15
8.8
mJ
A
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
88
3.7
5.5
- 55 to + 175
300 d
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 25 V, starting T J = 25 °C, L = 1.9 mH, R g = 25 ? , I AS = 15 A (see fig. 12).
c. I SD ? 15 A, dI/dt ? 140 A/μs, V DD ? V DS , T J ? 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91342
S11-1055-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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|---|---|
| IRL530STRL | 功能描述:MOSFET N-CH 100V 15A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRL530STRR | 功能描述:MOSFET N-Chan 100V 15 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL530STRRPBF | 功能描述:MOSFET N-Chan 100V 15 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL531 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 13A I(D) | TO-220AB |
| IRL540 | 功能描述:MOSFET N-Chan 100V 28 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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