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| 型号： | IRL5602S |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 24A D2PAK |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 24A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 42 毫欧 @ 12A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 44nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1460pF @ 15V |
| 功率 - 最大： | 75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IRL5602S Q803261 |
PD- 91888
IRL5602S
HEXFET ? Power MOSFET
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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
P-Channel
Fast Switching
Fully Avalanche Rated
G
D
S
V DSS = -20V
R DS(on) = 0.042 W
I D = -24A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D 2 Pak is a surface mount power package capable of accommodating die
D Pak
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D 2 Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
2
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ -4.5V
-24
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
-17
-96
75
0.5
± 8.0
290
-12
7.5
-0.81
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R q JC
R q JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
2.0
40
°C/W
www.irf.com
1
5/11/99
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRL5602SHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 24A 3-Pin(2+Tab) D2PAK |
| IRL5602SPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 42mOhms 29.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL5602SPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRL5602STRL | 功能描述:MOSFET P-CH 20V 24A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRL5602STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 24A 3-Pin(2+Tab) D2PAK T/R |
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