- 您现在的位置：买卖IC网 > PDF目录360968 > IRL5602STRL TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 24A I(D) | TO-263AB PDF资料下载
参数资料
| 型号： | IRL5602STRL |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 24A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| P通道| 20V的五（巴西）直| 24A条（丁）|对263AB |
| 文件页数： | 1/8页 |
| 文件大小： | 242K |
| 代理商： | IRL5602STRL |
Parameter
Typ.
–––
–––
Max.
2.0
40
Units
R
q
JC
R
q
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
IRL5602S
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Parameter
Max.
-24
-17
-96
75
0.5
± 8.0
290
-12
7.5
-0.81
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= -20V
R
DS(on)
= 0.042
W
I
D
= -24A
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
P-Channel
l
Fast Switching
l
Fully Avalanche Rated
Description
5/11/99
1
S
D
G
D Pak
°C/W
PD- 91888
相关PDF资料 |
PDF描述 |
|---|---|
| IRL5602STRR | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 24A I(D) | TO-263AB |
| IRL5NJ7413 | 30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package |
| IRL5Y7413CM | 30V Single N-Channel Hi-Rel MOSFET in a TO-257AA package |
| IRL610S | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263AB |
| IRL611 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) | TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRL5602STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 24A 3-Pin(2+Tab) D2PAK T/R |
| IRL5602STRLPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 42mOhms 29.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL5602STRR | 功能描述:MOSFET P-CH 20V 24A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRL5602STRRPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 42mOhms 29.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL-5-K-D-2 | 制造商:Lorlin 功能描述:KEYSWITCH DPDT DIFF KEY 制造商:Lorlin 功能描述:KEYSWITCH, DPDT, DIFF KEY 制造商:Lorlin 功能描述:KEYSWITCH, DPDT, DIFF KEY; Contact Configuration:DPDT; Switch Operation:Off-On; Angle of Throw:60; Actuator Style:Key; No. of Switch Positions:1; Contact Voltage AC Nom:115V; Contact Voltage DC Nom:24V; Contact Current Max:1A; ;RoHS Compliant: Yes |
发布紧急采购，3分钟左右您将得到回复。