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参数资料
| 型号： | IRL5602STRL |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 24A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| P通道| 20V的五（巴西）直| 24A条（丁）|对263AB |
| 文件页数： | 2/8页 |
| 文件大小： | 242K |
| 代理商： | IRL5602STRL |
IRL5602S
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -12A, V
GS
= 0V
T
J
= 25°C, I
F
= -12A
di/dt = -100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
58
54
-1.4
88
81
V
ns
nC
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 3.0mH
R
G
= 25
W
, I
AS
= -14A. (See Figure 12)
I
SD
￡
-12A, di/dt
￡
120A/μs, V
DD
￡
V
(BR)DSS
,
T
J
￡
175°C
Pulse width
￡
300μs; duty cycle
￡
2%.
Notes:
Source-Drain Ratings and Characteristics
-24
-96
A
Parameter
Min. Typ. Max. Units
-20
–––
–––
-0.013 –––
–––
––– 0.042
–––
––– 0.062
–––
––– 0.075
-0.7
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.7
–––
73
–––
53
–––
84
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -12A
V
GS
= -2.7V, I
D
= -10A
V
GS
= -2.5V, I
D
= -10A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -15V, I
D
= -12A
V
DS
= -20V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 150°C
V
GS
= -8.0V
V
GS
= 8.0V
I
D
= -12A
V
DS
= -16V
V
GS
= -4.5V, See Fig. 6 and 13
V
DD
= -10 V
I
D
= -12A
R
G
= 6.0
W
, V
GS
= 4.5V
R
D
= 0.8
W
, See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= -15V
= 1.0MHz, See Fig. 5
V
(BR)DSS
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
W
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
-1.0
–––
-25
-250
500
-500
44
8.7
19
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1460
790
370
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance
7.5
ns
I
DSS
Drain-to-Source Leakage Current
μA
S
D
G
**
When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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