参数资料
型号: IRL5602STRRPBF
厂商: International Rectifier
文件页数: 4/10页
文件大小: 0K
描述: MOSFET P-CH 20V 24A D2PAK
标准包装: 800
系列: HEXFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 24A
开态Rds(最大)@ Id, Vgs @ 25° C: 42 毫欧 @ 12A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 44nC @ 4.5V
输入电容 (Ciss) @ Vds: 1460pF @ 15V
功率 - 最大: 75W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)
IRL5602SPbF
2800
2400
V GS = 0V,   f = 1MHz
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
15
12
I D = -12A
V DS =-16V
V DS =-10V
2000
1600
1200
800
400
Ciss
Coss
Crss
9
6
3
0
1
10
-V DS , Drain-to-Source Voltage (V)
100
0
0
10
FOR TEST CIRCUIT
SEE FIGURE 13
20    30    40    50    60    70
Q G , Total Gate Charge (nC)
T J = 175 C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
°
1000
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
BY R DS(on)
100us
T J = 25 C
1
°
10
1ms
10ms
0.1
0.0
0.4
0.8
V GS = 0 V
1.2        1.6
1
1
T C = 25 ° C
T J = 175 ° C
Single Pulse
10
100
4
-V SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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