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参数资料
| 型号： | IRL6903S |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 91A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 91A章一（d）|对263AB |
| 文件页数： | 1/8页 |
| 文件大小： | 136K |
| 代理商： | IRL6903S |
IRL6903
HEXFET
Power MOSFET
PD - 9.1538B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter
Max.
-105
-74
-360
200
1.3
± 16
1000
-55
20
-5.0
-55 to + 175
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= -30V
R
DS(on)
= 0.011
I
D
= -105A
TO-220AB
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
Description
S
D
G
10/7/97
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| IRL7833 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPower MOSFET |
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| IRL7833PBF | 功能描述:MOSFET MOSFT 30V 150A 32nV 3.8mOhm Qg log lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL7833PBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:140W 制造商:International Rectifier 功能描述:N CH MOSFET, 30V, 150A, TO-220AB |
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