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参数资料
| 型号： | IRLBA1304P |
| 英文描述： | 40V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package |
| 中文描述： | 单40V的N沟道HEXFET功率MOSFET的在超级220（到273AA）封装 |
| 文件页数： | 1/8页 |
| 文件大小： | 95K |
| 代理商： | IRLBA1304P |
IRLBA1304/P
HEXFET
Power MOSFET
The HEXFET
is the
most popular power MOSFET in the world.
This particular HEXFET
is in the Super220
TM
and has
the same outline and
pinout as the industry standard TO-220. It has increased current handling
capability over both the TO-220 and the much larger TO-247 package. This
makes it ideal to reduce component count in multiparalled TO-220 applications,
reduce system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline.
This package has also been designed to meet
automotive qualification standard Q101.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
± 16
1160
100
30
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
300 (1.6mm from case )
20
°C
N
Parameter
Typ.
–––
0.5
–––
Max.
0.5
–––
58
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.004
I
D
= 185A
l
Logic-Level Gate Drive
l
Ultra Low On-Resistance
l
Same outline as TO-220
l
50% greater current in typ.
application conditions vs. TO-220
l
Fully Avalanche Rated
Description
6/1/99
www.irf.com
1
Super
_
220
* Current capability in normal application, see Fig.9.
PD- 91842
相关PDF资料 |
PDF描述 |
|---|---|
| IRLBA1304P | HEXFET Power MOSFET(HEXFET 功率MOS场效应管) |
| IRLBL1304 | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 95A I(D) | TO-263AA |
| IRLC1304 | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | CHIP |
| IRLC9024N | TRANSISTOR | MOSFET | P-CHANNEL | 55V V(BR)DSS | CHIP |
| IRLF110 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3.5A I(D) | TO-205AF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLBA1304PPBF | 功能描述:MOSFET N-CH 40V 185A SUPER-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLBA3803 | 功能描述:MOSFET N-CH 30V 179A SUPER-220 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLBA3803/P | 制造商:IRF 制造商全称:International Rectifier 功能描述:30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package |
| IRLBA3803P | 功能描述:MOSFET N-CH 30V 179A SUPER-220 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLBA3803PPBF | 制造商:International Rectifier 功能描述:MOSFET, 30V, 179A, 5 MOHM, 93.3 NC QG, LOGIC LEVEL, TO-273AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 179A 3PIN TO-273AA - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 30V 179A SUPER 220 制造商:International Rectifier 功能描述:MOSFET, N, 30V, 179A, SUPER 220 制造商:International Rectifier 功能描述:MOSFET, N, 30V, 179A, SUPER 220, Transistor Polarity:N Channel, Continuous Drain Current Id:179A, Drain Source Voltage Vds:30V, On Resistance Rds(on):5mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, Power Dissipation , RoHS Compliant: Yes 制造商:International Rectifier 功能描述:N CH MOSFET, 30V, 179A, SUPER-220, Transistor Polarity:N Channel, Continuous Dra |
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