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参数资料
| 型号： | IRLC1304 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | CHIP |
| 中文描述： | 晶体管| MOSFET的| N沟道| 40V的五（巴西）决策支持系统|芯片 |
| 文件页数： | 1/1页 |
| 文件大小： | 45K |
| 代理商： | IRLC1304 |
Parameter
V
(BR)DSS
R
DS(on)
Description
Guaranteed (Min/Max)
40V Min.
0.020
Max.
0.030
Max.
1.0V Min., 3.0V Max.
25μA Max.
± 15μA Max.
175°C Max.
Test Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 5.0A
V
GS
= 4.5V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±16V
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage
Operating Junction and
Storage Temperature Range
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
99% Al, 1% Si (0.004 mm)
0.181" x 0.303" ( 4.6mm x 7.7 mm)
150mm, with std. < 100 > flat
.014" + / -.003"
01-5298
0.1 mm
0.13mm Diameter Minimum, 0.51mm Max.
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Recommended Die Attach Conditions
40 V
Size 4.6
Rds(on)=0.020
6" Wafer
3/23/99
Mechanical Data
Die Outline
Reference Standard IR packaged part ( for design ) : IRLBL1304
Electrical Characteristics ( Wafer Form )
IRLC1304
HEXFET
Power MOSFET Die in Wafer Form
S
D
G
PD- 91871
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLC140B | 制造商:Vishay Semiconductors 功能描述:LOGIC MOSFET N-CHANNEL 100V - Bulk |
| IRLD014 | 功能描述:MOSFET N-Chan 60V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLD014PBF | 功能描述:MOSFET N-Chan 60V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLD024 | 功能描述:MOSFET N-Chan 60V 2.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLD024_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
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