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参数资料
| 型号： | IRL830T |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 2/3页 |
| 文件大小： | 40K |
| 代理商： | IRL830T |
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com
IRF830
Electrical Characteristics (
T
C
= 25
°
C unless otherwise specified)
Symbol
Parameter
Drain-to-source Breakdown
Voltage
V
(BR)DSS
/
T
J
Temperature Coefficient
I
D(ON)
(note 2)
Static Drain-to-Source
On-Resistance
V
GS(TH)
Gate Threshold Voltage
Conditions
Min
Typ
Max Units
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
Reference to 25
°
C,
I
D
= 1mA
V
GS
>
I
D(ON)
x R
DS(ON)
Max
V
GS
=10V, I
D
= 2.7A
(note 4)
V
DS
=
V
GS,
I
D
=
250
μ
A
V
DS
=
50V, I
D
=
2.7A
V
DS
=
500V, V
GS
=
0V
V
DS
= 400V, V
GS
= 0V,
T
C
= 125
°
C
500
V
Breakdown Voltage
-
0.61
-
V/
°
C
On-State Drain Current
4.5
A
R
DS(ON)
1.5
V
2.0
-
4.0
g
fs
Forward Transconductance
2.5
-
-
S
25
I
DSS
Drain-to-Source Leakage
Current
-
-
250
μ
A
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”)
Charge
Turn-On Delay Time
Rise Time
Turn -Off Delay Time
Fall Time
V
GS
= 20V
100
I
GSS
V
G
= -20V
-
-
-100
nA
Q
g
Q
qs
I
D
=3.1A
V
DS
= 400V
-
-
-
-
38
5.0
Q
gd
V
GS
= 10V (note 4)
22
nC
t
d ( on)
T
r
t
d (off)
T
f
-
-
-
-
8.2
16
42
16
-
-
-
-
-
-
-
-
-
V
DD
= 250V
I
D
= 3.1.1A
R
G
= 12
R
D
= 79
(note 4)
Between lead 6mm (0.25in.)
from package and center or die
contact
V
GS
= 0V
V
DS
= 25V
F = 1.0MHZ
ns
L
D
Internal Drain Inductance
-
4.5
L
S
C
iss
C
oss
C
rss
Source-Drain Rating Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) (Note 1)
V
SD
Diode Forward Voltage (note 4) T
J
=25
°
C
,
I
S
=2.5A,V
GS
=DV
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature.
2. V
DD
= 50V, starting Tj = 25
°
C, L = 24 mH R
G
= 25
, I
AS
= 4.5A
3. I
SD
≤
4.5A, di/dt
≤
75A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
150
°
C
4. Pulse with
≤
300
μ
s; duty cycle
≤
2%
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
7.5
610
160
68
nH
pF
Conditions
Min Typ
Max Units
I
S
-
-
4.5
I
SM
MOSFET symbol showing the
integral reverse p-n junction
diode.
-
-
18
A
-
-
-
-
1.6
640
2.0
V
ns
μ
C
320
1.0
T
J
=25
°
C, I
F
=2.1A
di/dt=100A/
μ
s (Note 4)
Intrinsic turn-on time is negligible (turn-on is dominated by (L
S
+L
D
)
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