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参数资料
| 型号： | IRLBD59N04E |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 119K |
| 代理商： | IRLBD59N04E |
Parameter
Max.
59
41
230
130
0.89
± 10
320
35
13
2.2
± 50
± 2.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
V
GS
Clamp Current
Electrostatic Votage Rating
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
mA
kV
°C
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
I
G
V
ESD
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
IRLBD59N04E
HEXFET
Power MOSFET
The IRLBD59N04E is a 40V, N-channel HEXFET
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
Max.
1.12
40
Units
°C/W
R
θ
JC
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.018
I
D
= 59A
l
Integrated Temperature Sensing Diode
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fully Avalanche Rated
l
Zener Gate Protected
Description
4/11/00
PD -93910
1
5 Lead-D
2
Pak
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PDF描述 |
|---|---|
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| IRLI2203N | HEXFET Power MOSFET |
| IRLI2203 | TERMINAL |
| IRLI2203G | Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLBD59N04EPBF | 制造商:International Rectifier 功能描述:MOSFET N D2-PAK 40V 59A |
| IRLBD59N04ETRLP | 功能描述:MOSFET N-CH 40V 59A D2PAK-5 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLBL1304 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRLC014B | 制造商:Vishay Semiconductors 功能描述:LOGIC MOSFET N-CHANNEL 60V - Bulk |
| IRLC024B | 制造商:Vishay Semiconductors 功能描述:LOGIC MOSFET N-CHANNEL 60V - Bulk |
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