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参数资料
| 型号： | IRLBD59N04E |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 119K |
| 代理商： | IRLBD59N04E |
IRFLBD59N04E
2
www.irf.com
Parameter
Min. Typ. Max. Units
40
–––
–––
0.036 –––
–––
––– 0.018
–––
––– 0.021
1.0
–––
10
–––
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.9
–––
110
–––
30
–––
74
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 35A
V
GS
= 5.0V, I
D
= 30A
V
DS
= V
GS
, I
D
= 250μA
I
GSS
= 20μA
V
DS
= 25V, I
D
= 35A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
V
GS
= 5.0V
V
GS
= -5.0V
I
D
= 35A
V
DS
= 32V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 20V
I
D
= 35A
R
G
= 5.1
,
V
GS
= 5.0V
,
See Fig.10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
V
GS
g
fs
Gate Threshold Voltage
Clamp Voltage
Forward Transconductance
2.0
20
–––
25
250
1.0
-1.0
53
16
18
–––
–––
–––
–––
V
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2310 –––
640
130
2250 –––
580
530
–––
–––
pF
–––
–––
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 35A, V
GS
= 0V
T
J
= 25°C, I
F
= 35A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
Sense Diode Rating
–––
–––
–––
–––
54
90
1.3
81
130
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
59
230
A
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
–––
5.0
–––
L
D
Internal Drain Inductance
–––
2.0
–––
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
675
–––
-1.30 -1.40 -1.58 mV/°C I
F
= 250μA, See Fig.14
Conditions
V
FM
V
F
/
T
J
Sense Diode Maximum Voltage Drop
Sense Diode Temperature Coefficient
725
mV
I
F
= 250μA
μA
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