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参数资料
| 型号： | IRLI540N |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS场效应管) |
| 中文描述： | HEXFET功率MOSFET（马鞍山的HEXFET功率场效应管） |
| 文件页数： | 8/8页 |
| 文件大小： | 122K |
| 代理商： | IRLI540N |
IRLI540N
Part Marking Information
TO-220 Fullpak
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
NOTES:
1 DIMENSIONING & TOLERANCING
2 CONTROLLING DIMENSION: INCH.
D
C
A
B
MINIMUM CREEPAG E
DISTANCE BETW EEN
A-B-C-D = 4.80 (.189)
3X
2.85 (.112)
2.65 (.104)
2.80 (.110)
2.60 (.102)
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
3.40 (.133)
3.10 (.123)
- A -
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
3.30 (.130)
3.10 (.122)
- B -
0.90 (.035)
0.70 (.028)
3X
0.25 (.010)
M
A M B
2.54 (.100)
2X
3X
13.70 (.540)
13.50 (.530)
16.00 (.630)
15.80 (.622)
1 2 3
10.60 (.417)
10.40 (.409)
1.40 (.055)
1.05 (.042)
0.48 (.019)
0.44 (.017)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
ASSEMBLY
LOT CODE
E401 9245
IRFI840G
EXAMPLE : THIS IS AN IRFI840G
W ITH ASSEMBLY
LOT CODE E401
A
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice.
3/98
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLI540NPBF | 功能描述:MOSFET MOSFT 100V 20A 44mOhm 49.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLI610A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLI610ATU | 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLI620 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A) |
| IRLI620A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
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