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参数资料
| 型号： | IRLIZ34N |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 105K |
| 代理商： | IRLIZ34N |
IRLIZ34N
Parameter
Min. Typ. Max. Units
55
–––
–––
0.065 –––
–––
––– 0.035
–––
––– 0.046
–––
––– 0.060
1.0
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.9
–––
100
–––
29
–––
21
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
V
GS
= 5.0V, I
D
= 12A
V
GS
= 4.0V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 16A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 16A
V
DS
= 44V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 16A
R
G
= 6.5
,
V
GS
= 5.0V
R
D
= 1.8
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
25
5.2
14
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
C
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
880
220
94
12
–––
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5
–––
μA
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Uses IRLZ34N data and test conditions
V
DD
= 25V, starting T
J
= 25°C, L = 610μH
R
G
= 25
, I
AS
= 16A. (See Figure 12)
I
SD
≤
16A, di/dt
≤
270A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
t=60s, =60Hz
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
76
190
1.3
110
290
V
ns
nC
A
–––
–––
110
–––
–––
22
S
D
G
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