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参数资料
| 型号： | IRLL2703 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET?? Power MOSFET |
| 中文描述： | 的HEXFET？？功率MOSFET |
| 文件页数： | 2/9页 |
| 文件大小： | 123K |
| 代理商： | IRLL2703 |
IRLL2703
2
www.irf.com
Parameter
Min. Typ. Max. Units
30
–––
–––
0.06
–––
––– 0.045
–––
––– 0.060
–––
––– 0.070
1.0
–––
5.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.3
–––
2.3
–––
5.1
–––
7.4
–––
24
–––
6.9
–––
14
–––
530
–––
230
–––
95
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.9A
V
GS
= 5.0V, I
D
= 3.1A
V
GS
= 4.0V, I
D
= 2.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 2.3 A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 2.3A
V
DS
= 24V
V
GS
= 5.0V, See Fig. 6 and 9
V
DD
= 15V
I
D
= 2.3A
R
G
= 6.2
R
D
= 6.5
,
See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.4
–––
25
250
100
-100
14
3.4
7.6
–––
–––
–––
–––
–––
–––
–––
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
ns
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
2.3A, di/dt
≤
150A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 24 mH
R
G
= 25
, I
AS
= 3.9A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.3A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
42
62
1.0
63
94
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
16
3.9
A
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| IRLL2703TRPBF | 功能描述:MOSFET MOSFT 30V 5.5A 45mOhm 9.3nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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