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参数资料
| 型号： | IRLR024Z |
| 厂商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽车MOSFET的 |
| 文件页数： | 2/11页 |
| 文件大小： | 215K |
| 代理商： | IRLR024Z |
2
www.irf.com
S
D
G
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
55
–––
–––
0.053
–––
46
–––
–––
–––
–––
1.0
–––
7.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.6
–––
1.6
–––
3.9
–––
8.2
–––
43
–––
19
–––
16
–––
4.5
–––
–––
58
80
100
3.0
–––
20
250
200
-200
9.9
–––
–––
–––
–––
–––
–––
–––
V
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
m
V
GS(th)
gfs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
Between lead,
nH
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
380
62
39
180
50
81
–––
–––
–––
–––
–––
–––
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
16
A
–––
–––
64
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
16
11
1.3
24
17
V
ns
nC
V
GS
= 5.0V, I
D
= 5.0A
V
GS
= 4.5V, I
D
= 3.0A
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
DS
= 25V, I
D
= 9.6A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
I
D
= 5.0A
V
DS
= 44V
V
GS
= 5.0V
V
DD
= 28V
I
D
= 5.0A
R
G
= 28
V
GS
= 5.0V
V
GS
= 16V
V
GS
= -16V
T
J
= 25°C, I
S
= 9.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.6A, V
DD
= 28V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.6A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
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