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| 型号： | IRLR120TR |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 7.7A DPAK |
| 标准包装： | 2,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 270 毫欧 @ 4.6A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 490pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRLR120, IRLU120, SiHLR120, SiHLU120
www.vishay.com
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
100
V GS = 5.0 V
12
3.0
7.1
Single
D
0.27
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Surface Mount (IRLR120, SiHLR120)
? Straight Lead (IRLU120, SiHLU120)
? Available in Tape and Reel
? Logic-Level Gate Drive
? R DS(on) Specified at V GS = 4 V and 5 V
?
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DPAK
(TO-252)
IPAK
(TO-251)
DESCRIPTION
D
D
G
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
S
G
D S
S
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
N-Channel MOSFET
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHLR120-GE3
IRLR120PbF
SiHLR120-E3
DPAK (TO-252)
SiHLR120TRL-GE3
IRLR120TRLPbF a
SiHLR120TL-E3 a
DPAK (TO-252)
SiHLR120TR-GE3
IRLR120TRPbF a
SiHLR120T-E3 a
DPAK (TO-252)
SiHLR120TRR-GE3
IRLR120TRRPbF a
SiHLR120TR-E3 a
IPAK (TO-251)
SiHLU120-GE3
IRLU120PbF
SiHLU120-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
100
± 10
UNIT
V
Continuous Drain Current
V GS at 5.0 V
T C = 25 °C
T C = 100 °C
I D
7.7
4.9
A
Pulsed Drain Current a
I DM
31
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
0.33
0.020
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
210
7.7
4.2
mJ
A
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB
Peak Diode Recovery dV/dt c
Mount) e
T C = 25 °C
T A = 25 °C
P D
dV/dt
42
2.5
5.5
W
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
T J , T stg
- 55 to + 150
260
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 25 V, starting T J = 25 °C, L = 5.3 mH, R g = 25 ? , I AS = 7.7 A (see fig. 12).
c. I SD ? 9.2 A, dI/dt ? 110 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0167-Rev. D, 04-Feb-13
1
Document Number: 91324
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| IRLR120TRL | 功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IRLR120TRPBF | 功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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