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参数资料
| 型号： | IRLR120TR |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 7.7A DPAK |
| 标准包装： | 2,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 270 毫欧 @ 4.6A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 490pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRLR120, IRLU120, SiHLR120, SiHLU120
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJA
R thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 10 V
V DS = 100 V, V GS = 0 V
V DS = 80 V, V GS = 0 V, T J = 125 °C
100
-
1.0
-
-
-
-
0.13
-
-
-
-
-
-
2.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 5.0 V
V GS = 4.0 V
I D = 4.6 A b
I D = 3.9 A b
-
-
-
-
0.27
0.38
?
Forward Transconductance
g fs
V DS = 50 V, I D = 4.6 A b
4.4
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
490
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
150
30
-
-
-
12
pF
Gate-Source Charge
Q gs
V GS = 5.0 V
I D = 9.2 A, V DS = 80 V,
see fig. 6 and 13 b
-
-
3.0
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
9.8
7.1
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 50 V, I D = 9.2 A,
R g = 9.0 ? , R D = 5.2 ? , see fig. 10 b
-
-
-
64
21
27
-
-
-
ns
Internal Drain Inductance
L D
Between lead,
6 mm (0.25") from
package and center of
G
D
-
4.5
-
nH
Internal Source Inductance
L S
die contact c
-
7.5
-
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
7.7
31
A
Body Diode Voltage
V SD
T J = 25 °C, I S = 7.7 A, V GS = 0
V b
-
-
2.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t rr
Q rr
T J = 25 °C, I F = 9.2 A, dI/dt = 100 A/μs b
-
-
110
0.80
140
1.0
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
S13-0167-Rev. D, 04-Feb-13
2
Document Number: 91324
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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