参数资料
型号: IRLU024N
厂商: International Rectifier
文件页数: 2/11页
文件大小: 0K
描述: MOSFET N-CH 55V 17A I-PAK
标准包装: 75
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 17A
开态Rds(最大)@ Id, Vgs @ 25° C: 65 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 5V
输入电容 (Ciss) @ Vds: 480pF @ 25V
功率 - 最大: 45W
安装类型: 通孔
封装/外壳: TO-251-3 长引线,IPak,TO-251AB
供应商设备封装: I-Pak
包装: 管件
其它名称: *IRLU024N
IRLR/U024N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
55 ––– ––– V V GS = 0V, I D = 250μA
––– 0.061 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.065 V GS = 10V, I D = 10A ?
R DS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.080
?
V GS = 5.0V, I D = 10A ?
––– ––– 0.110 V GS = 4.0V, I D = 9.0A ?
––– 20 ––– R G = 12 ?, V GS = 5.0V
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0 ––– 2.0 V V DS = V GS , I D = 250μA
8.3 ––– ––– S V DS = 25V, I D = 11A
––– ––– 25 V DS = 55V, V GS = 0V
μA
––– ––– 250 V DS = 44V, V GS = 0V, T J = 150°C
––– ––– 100 V GS = 16V
nA
––– ––– -100 V GS = -16V
––– ––– 15 I D = 11A
––– ––– 3.7 nC V DS = 44V
––– ––– 8.5 V GS = 5.0V, See Fig. 6 and 13 ??
––– 7.1 ––– V DD = 28V
––– 74 ––– I D = 11A
ns
––– 29 ––– R D = 2.4 ?, See Fig. 10 ??
L D
Internal Drain Inductance
––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
D
L S
Internal Source Inductance
––– 7.5 –––
from package
and center of die contact
G
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 480 ––– V GS = 0V
––– 130 ––– pF V DS = 25V
––– 61 ––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
––– –––
––– –––
17
72
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Diode Forward Voltage
Reverse Recovery Time
––– ––– 1.3 V T J = 25°C, I S = 11A, V GS = 0V ?
––– 60 90 ns T J = 25°C, I F = 11A
Q rr
Reverse RecoveryCharge
––– 130 200 nC
di/dt = 100A/μs ?
t on
Notes:
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
? V DD = 25V, starting T J = 25°C, L = 790μH
R G = 25 ? , I AS = 11A. (See Figure 12)
? I SD ≤ 11A, di/dt ≤ 290A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
2
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? This is applied for I-PAK, L S of D-PAK is measured between
lead and center of die contact
? Uses IRLZ24N data and test conditions.
www.irf.com
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