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参数资料
| 型号： | IRLU024N |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 162K |
| 代理商： | IRLU024N |
HEXFET
Power MOSFET
S
D
G
Parameter
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 0.065
I
D
= 17A
Description
Fifth Generation HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
2/10/00
www.irf.com
1
l
Logic-Level Gate Drive
l
Surface Mount (IRLR024N)
l
Straight Lead (IRLU024N)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
17
12
72
45
0.3
± 16
68
11
4.5
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
PD- 91363E
IRLR024N
IRLU024N
D-Pak I-Pak
IRLR024N IRLU024N
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLU024NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK |
| IRLU024NPBF | 功能描述:MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLU024PBF | 功能描述:MOSFET N-Chan 60V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLU024Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRLU024ZHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 16A 3PIN IPAK - Rail/Tube |
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