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参数资料
| 型号： | IRLZ14 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 10A TO-220AB |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 6A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.4nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 25V |
| 功率 - 最大： | 43W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | *IRLZ14 |
IRLZ14, SiHLZ14
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( Ω )
Q g (Max.) (nC)
V GS = 5.0 V
60
8.4
0.20
FEATURES
? Dynamic dV/dt Rating
? Logic-Level Gate Drive
? R DS(on) Specified at V GS = 4 V and 5 V
Available
RoHS*
COMPLIANT
Q gs (nC)
Q gd (nC)
Configuration
3.5
6.0
Single
? 175 °C Operating Temperature
? Fast Switching
? Ease of Paralleling
TO-220AB
G
D
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
D
S
S
ruggedized device design,
cost-effectiveness.
low on-resistance and
N-Channel MOSFET
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRLZ14PbF
SiHLZ14-E3
IRLZ14
SiHLZ14
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
60
± 10
UNIT
V
Continuous Drain Current
V GS at 5.0 V
T C = 25 °C
T C = 100 °C
I D
10
7.2
A
Pulsed Drain Current a
I DM
40
Linear Derating Factor
0.29
W/°C
Single Pulse Avalanche Energy b
E AS
39.5
mJ
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
T C = 25 °C
for 10 s
6-32 or M3 screw
P D
dV/dt
T J , T stg
43
4.5
- 55 to + 175
300 d
10
1.1
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 25 V, starting T J = 25 °C, L = 0.79 mH, R g = 25 Ω , I AS = 10 A (see fig. 12).
c. I SD ≤ 10 A, dI/dt ≤ 90 A/μs, V DD ≤ V DS , T J ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91325
S11-0519-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLZ14_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRLZ14-024 | 制造商:International Rectifier 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,10A I(D),TO-220AB,FORMED LEADS 024 |
| IRLZ14A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220AB |
| IRLZ14L | 功能描述:MOSFET N-Chan 60V 10 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLZ14LPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
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