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| 型号： | IRLZ14 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 10A TO-220AB |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 6A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.4nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 25V |
| 功率 - 最大： | 43W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | *IRLZ14 |
IRLZ14, SiHLZ14
Vishay Siliconix
Peak Dio d e Recovery d V/ d t Test Circuit
D.U.T.
+
Circuit layout con s ideration s
? Low s tray inductance
? G round plane
? Low leakage inductance
current tran s former
-
+
-
-
+
R g
?
?
?
?
dV/dt controlled by R g
Driver s ame type a s D.U.T.
I S D controlled by duty factor “D”
D.U.T. - device under te s t
+
-
V DD
Driver gate drive
P.W.
Period
D=
P.W.
Period
V GS = 10 V a
D.U.T. l S D waveform
Rever s e
recovery
current
Body diode forward
current
dI/dt
D.U.T. V D S waveform
Diode recovery
Re-applied
dV/dt
V DD
voltage
Inductor current
Body diode forward drop
Ripple ≤ 5 %
I S D
Note
a. V GS = 5 V for logic level device s
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91325 .
Document Number: 91325
S11-0519-Rev. C, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLZ14_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRLZ14-024 | 制造商:International Rectifier 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,10A I(D),TO-220AB,FORMED LEADS 024 |
| IRLZ14A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220AB |
| IRLZ14L | 功能描述:MOSFET N-Chan 60V 10 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLZ14LPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
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