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参数资料
| 型号： | IRLZ44ZS |
| 厂商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽车MOSFET的 |
| 文件页数： | 4/12页 |
| 文件大小： | 304K |
| 代理商： | IRLZ44ZS |
4
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Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
50
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VG
VDS= 44V
VDS= 28V
VDS= 11V
ID= 31A
0.2
0.6
1.0
1.4
1.8
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
IS
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLZ44ZSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 51A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Bulk |
| IRLZ44ZSPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 13.5mOhms 24nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLZ44ZSTRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Tape and Reel |
| IRLZ44ZSTRLPBF | 功能描述:MOSFET MOSFT 55V 51A 13.5mOhm 24nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLZ44ZSTRRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Tape and Reel |
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