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参数资料
| 型号： | IRS2101PBF |
| 厂商： | International Rectifier |
| 英文描述： | HIGH AND LOW SIDE DRIVER |
| 中文描述： | 高端和低端驱动 |
| 文件页数： | 3/15页 |
| 文件大小： | 319K |
| 代理商： | IRS2101PBF |
IRS2101(S)PbF
www.irf.com
3
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
CCUV-
Logic “1” input voltage
2.5 — —
Logic “0” input voltage
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
—
—
—
0.05
0.8
0.2
—
0.02
0.1
—
—
50
V
B
= V
S
= 600 V
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
—
30
55
—
150
270
—
3
10
V
IN
= 5 V
V
IN
= 0 V
Logic “0” input bias current
—
8
—
8.9
5
V
CC
supply undervoltage positive going threshold
V
CC
supply undervoltage negative going threshold
9.8
7.4
8.2
9
V
O
= 0 V
V
IN
= Logic “1”
PW
≤
10
μ
s
V
O
= 15 V
V
IN
= Logic “0”
PW
≤
10
μ
s
I
O+
Output high short circuit pulsed current
130
290
—
I
O-
Output low short circuit pulsed current
270
600
—
Symbol
ton
toff
tr
tf
MT
Definition
Min.
—
Typ. Max. Units Test Conditions
160
220
Turn-on propagation delay
V
S
= 0 V
V
S
= 600 V
Turn-off propagation delay
—
150
220
Turn-on rise time
—
70
170
Turn-off fall time
—
35
90
Delay matching, HS & LS turn-on/off
—
—
50
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, C
L
= 1000 pF and T
A
= 25
°
C unless otherwise specified.
V
mA
V
μ
A
ns
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V and T
A
= 25
°
C unless otherwise specified. The V
IN
, V
TH,
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
V
CC
= 10 V to 20 V
I
O
= 2 mA
V
IN
= 0 V or 5 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2101SPBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 160ns 130mA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2101STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2103 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2103PBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2103SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 130mA 680ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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