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| 型号： | IRS2101SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/15页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HIGH/LOW SIDE 8-SOIC |
| 标准包装： | 95 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 160ns |
| 电流 - 峰： | 290mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1381 (CN2011-ZH PDF) |
IRS2101(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V B
V S
V HO
V CC
V LO
V IN
dV S /dt
Definition
High - side floating supply voltage
High - side floating supply offset voltage
High - side floating output voltage
Low - side and logic fixed supply voltage
Low - side output voltage
Logic input voltage (HIN & LIN)
Allowable offset supply voltage transient
Min.
-0.3
V B - 25
V S - 0.3
-0.3
-0.3
-0.3
—
Max.
625
V B + 0.3
V B + 0.3
25
V CC + 0.3
V CC + 0.3
50
Units
V
V/ns
P D
Rth JA
T J
T S
T L
Package power dissipation @ T A ≤ +25 ° C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(8 lead PDIP)
(8 lead SOIC)
(8 lead PDIP)
(8 lead SOIC)
—
—
—
—
—
-55
—
1.0
0.625
125
200
150
150
300
W
° C/W
° C
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V S offset rating is tested with all supplies biased at a 15 V differential.
Symbol
V B
V S
V HO
V CC
V LO
V IN
T A
Definition
High - side floating supply absolute voltage
High - side floating supply offset voltage
High - side floating output voltage
Low - side and logic fixed supply voltage
Low - side output voltage
Logic input voltage (HIN & LIN)
Ambient temperature
Min.
V S + 10
Note 1
V S
10
0
0
-40
Max.
V S + 20
600
V B
20
V CC
V CC
125
Units
V
° C
Note 1 : Logic operational for V S of -5 V to +600 V. Logic state held for V S of -5 V to -V BS . (Please refer to the Design
Tip DT97-3 for more details).
www.irf.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2101STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2103 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2103PBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2103SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 130mA 680ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2103STRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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